 Brave New Materials
Articles on the defect, process-control, and yield issues associated with integrating
advanced materials into process recipes.
(Brave
New Materials) Reclaiming copper/low-k control wafers during development
of 0.13- and 0.10-µm devices
A series of in-house experiments demonstrates that methods for
reclaiming copper control wafers involving CMP or a universal chemistry
can restore wafers to near-pristine condition. (September 2002)
(Brave
New Materials) Evaluating the impact of an acetylenic dioltype
surfactant on DUV lithography
Experiments show that an acetylenic dioltype surfactant
in photoresist developer improves the wetting of the developer on
DUV resist surfaces, leading to faster and more-uniform development.
(June 2002)
(Brave
New Materials) Experimenting
with new cleaning technologies for use in semiconductor manufacturing
Advanced
device designs and the integration of copper and low-k dielectrics
in IC fabrication have created a need for sophisticated and compatible
cleaning chemistries. (April 2002)
(Brave New Materials)
Using
a cryogenic aerosol process to clean copper, low-k materials without damage
Tests
demonstrate that an aerosol cleaning technology using argon and nitrogen
is compatible with copper and low-k processes and effective at removing
associated particle defects. (February 2002)
(Brave New Materials) Implementing
SiGe technology to produce heterojunction bipolar transistors
The development of a low-temperature UHV/CVD technique for depositing
epitaxial silicon has made it possible to implement high-yield production
of SiGe heterojunction bipolar transistors. (July 2001)
(Brave New Materials) Testing
self-primed spin-on low-k materials to optimize the cost of ownership
Significant process-cost savings could be achieved by including an adhesion
promoter in spin-on dielectric formulations. (June 2001)
(Brave New Materials) Developing a modified ICP process to strip resist without damaging low-k dielectric film
Inductively coupled plasma ashing experiments demonstrate that lowering the pressure and temperature of the plasma chamber reduces the diffusion of oxygen into the low-k dielectric layer. (April 2001)
(Brave New Materials) Addressing the challenges of spin-on low-k dielectric dispense management
Optimizing dispense tool designs and SOD management will require cooperation between equipment manufacturers, materials suppliers, and end-users. (February 2001)

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